Seong Kwang Kim

According to our database, Seong Kwang Kim authored at least 5 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2024

First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication.

Nahyun Rheem, Jaeyong Jeong, Yoon-Je Suh, Chan Jik Lee, Bong Ho Kim, Joon Pyo Kim, Seong Kwang Kim, Hyeongrak Lim, Jongmin Kim, Dae-Hwan Ahn, Jae-Hoon Han, Jongwon Lee, Sanghyeon Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole Mobility.

Seong Kwang Kim, Hyeongrak Lim, Jaeyong Jeong, Young-Keun Park, Jejune Park, Sungil Park, Jaehyun Park, Daewon Ha, Byung Jin Cho, Sanghyeon Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing.

Jaeyong Jeong, Seong Kwang Kim, Yoon-Je Suh, Jisung Lee, Joonyoung Choi, Juhyuk Park, Joon Pyo Kim, Bong Ho Kim, Younjung Jo, Seung-Young Park, Jongmin Kim, Sanghyeon Kim

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

3D stackable cryogenic InGaAs HEMTs for heterogeneous and monolithic 3D integrated highly scalable quantum computing systems.

Jaeyong Jeong, Seong Kwang Kim, Jongmin Kim, Dae-Myeong Geum, Jisung Lee, Seung-Young Park, Sanghyeon Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2018

Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length.

Junyeap Kim, Hanbin Yoo, Heesung Lee, Seong Kwang Kim, Sungju Choi, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim

Microelectron. Reliab., 2018