Seiichi Miyazaki
According to our database1,
Seiichi Miyazaki
authored at least 25 papers
between 2005 and 2022.
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Bibliography
2022
IEICE Trans. Electron., October, 2022
Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures.
IEICE Trans. Electron., October, 2022
2019
Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots.
IEICE Trans. Electron., 2019
2017
Embedding of Ti Nanodots into SiO<sub>x</sub> and Its Impact on Resistance Switching Behaviors.
IEICE Trans. Electron., 2017
2015
Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements.
IEICE Trans. Electron., 2015
2014
High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.
IEICE Trans. Electron., 2014
IEICE Trans. Electron., 2014
2013
Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.
IEICE Trans. Electron., 2013
X-Ray Photoemission Study of SiO<sub>2</sub>/Si/Si<sub>0.55</sub>Ge<sub>0.45</sub>/Si Heterostructures.
IEICE Trans. Electron., 2013
Evaluation of Chemical Composition and Bonding Features of Pt/SiO<sub>x</sub>/Pt MIM Diodes and Its Impact on Resistance Switching Behavior.
IEICE Trans. Electron., 2013
Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures.
IEICE Trans. Electron., 2013
Control of Interfacial Reaction of HfO<sub>2</sub>/Ge Structure by Insertion of Ta Oxide Layer.
IEICE Trans. Electron., 2013
IEICE Trans. Electron., 2013
2012
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering.
IEICE Trans. Electron., 2012
2011
Impact of Annealing Ambience on Resistive Switching in Pt/TiO<sub>2</sub>/Pt Structure.
IEICE Trans. Electron., 2011
Characterization of Mg Diffusion into HfO<sub>2</sub>/SiO<sub>2</sub>/Si(100) Stacked Structures and Its Impact on Detect State Densities.
IEICE Trans. Electron., 2011
IEICE Trans. Electron., 2011
2010
IEICE Trans. Electron., 2010
2009
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories.
IEICE Trans. Electron., 2009
2008
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO<sub>2</sub> Structure as Evaluated by AFM/KFM.
IEICE Trans. Electron., 2008
2007
Evaluation of Dielectric Reliability of Ultrathin HfSiO<sub>x</sub>N<sub>y</sub> in Metal-Gate Capacitors.
IEICE Trans. Electron., 2007
2005
Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots.
IEICE Trans. Electron., 2005
Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation.
IEICE Trans. Electron., 2005
IEICE Trans. Electron., 2005
Characterization of Germanium Nanocrystallites Grown on SiO<sub>2</sub> by a Conductive AFM Probe Technique.
IEICE Trans. Electron., 2005