Sei-Hyung Ryu

According to our database, Sei-Hyung Ryu authored at least 4 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method.

Philipp Steinmann, Daniel J. Lichtenwalner, Shane Stein, Jae-Hyung Park, Suman Das, Sei-Hyung Ryu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress.

S. R. Stein, J. Kim, Suman Das, Daniel J. Lichtenwalner, Sei-Hyung Ryu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode.

Arman Ur Rashid, Britt Brooks, Steven Manz, Daniel J. Lichtenwalner, Sei-Hyung Ryu

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.

Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour

Proceedings of the IEEE International Reliability Physics Symposium, 2022