Sechung Oh

According to our database¹, Sechung Oh authored at least 2 papers between 2021 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

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Bibliography

2024

Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory.

[BibT_eX]

[DOI]

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2021

Reliability of STT-MRAM for various embedded applications.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Sechung Oh

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