Sébastien Fregonese

According to our database, Sébastien Fregonese authored at least 21 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2024

On the Safe Operating Area of InP HBTs.

Markus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications.

Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

Electro-Thermal Investigation of SiGe HBTs: A Review.

Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2021

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance.

Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2019

Collector-substrate modeling of SiGe HBTs up to THz range.

Bishwadeep Saha, Sébastien Frégonese, Soumya Ranjan Panda, Anjan Chakravorty, Didier Céli, Thomas Zimmer

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range.

Soumya Ranjan Panda, Sébastien Fregonese, Anjan Chakravorty, Thomas Zimmer

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

2D RF Electronics: from devices to circuits - challenges and applications.

D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy

Proceedings of the 76th Device Research Conference, 2018

2017

Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications.

Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer

Proc. IEEE, 2017

A class-J power amplifier for 5G applications in 28nm CMOS FD-SOI technology.

Tony Hanna, Nathalie Deltimple, Sébastien Fregonese

Proceedings of the 30th Symposium on Integrated Circuits and Systems Design: Chip on the Sands, 2017

A wideband highly efficient class-J integrated power amplifier for 5G applications.

Tony Hanna, Nathalie Deltimple, Sébastien Fregonese

Proceedings of the 15th IEEE International New Circuits and Systems Conference, 2017

2016

Physics-based electrical compact model for monolayer Graphene FETs.

Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Substrate-coupling effect in BiCMOS technology for millimeter wave applications.

Sébastien Fregonese, Rosario D'Esposito, Magali De Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer

Proceedings of the IEEE 13th International New Circuits and Systems Conference, 2015

Graphene FET evaluation for RF and mmWave circuit applications.

Sébastien Fregonese, Jorgue Daniel Aguirre Morales, Magali De Matos, Cristell Maneux, Thomas Zimmer

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

Characterization and modeling of low-frequency noise in CVD-grown graphene FETs.

C. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei

Proceedings of the 45th European Solid State Device Research Conference, 2015

A new physics-based compact model for Bilayer Graphene Field-Effect Transistors.

Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation.

C. Mukherjee, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, David Mele

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Pulsed I(V) - pulsed RF measurement system for microwave device characterization with 80ns/45GHz.

Mario Weis, Sébastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices.

Si-Yu Liao, Jean-Marie Retrouvey, Guillaume Agnus, Weisheng Zhao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Djaafar Chabi, Arianna Filoramo, Vincent Derycke, Christian Gamrat, Jacques-Olivier Klein

IEEE Trans. Circuits Syst. I Regul. Pap., 2011

2010

From nanoscale technology scenarios to compact device models for ambipolar devices.

Sébastien Fregonese, Cristell Maneux, Thomas Zimmer

Proceedings of the 17th IEEE International Conference on Electronics, 2010

2007

CNTFET Modeling and Reconfigurable Logic-Circuit Design.

Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Christophe Lallement, Cristell Maneux, Johnny Goguet, Sébastien Fregonese, Thomas Zimmer, Lorena Anghel, Trong-Trinh Dang, Régis Leveugle

IEEE Trans. Circuits Syst. I Regul. Pap., 2007

2004

Representation of the SiGe HBT's thermal impedance by linear and recursive networks.

Hassène Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese

Microelectron. Reliab., 2004