Sayed Ali Albahrani

According to our database1, Sayed Ali Albahrani authored at least 8 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

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Bibliography

2024
Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2020
An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020

2019
Design methodology considering evolution of statistical corners under long term degradation.
Microelectron. J., 2019

A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited).
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018


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