Sayed Ali Albahrani

According to our database, Sayed Ali Albahrani authored at least 8 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model.

Yasin Yüce, Sayed Ali Albahrani, Dirk Schwantuschke, Maxime Moulin, Arnulf Leuther

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies.

Cristina Maurette-Blasini, Dirk Schwantuschke, Sayed Ali Albahrani, Peter Brückner, Konstantin Kuliabin, Sébastien Chartier, Rüdiger Quay

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate.

Antony Abel Kunnath, Maxime Moulin, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT.

Antony Abel Kunnath, Sayed Ali Albahrani, Dirk Schwantuschke, Arnulf Leuther

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2020

An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers.

Hossein Eslahi, Sayed Ali Albahrani, Dhawal Mahajan, Sourabh Khandelwal

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020

2019

Design methodology considering evolution of statistical corners under long term degradation.

Hossein Eslahi, Dhawal Mahajan, Sayed Ali Albahrani, Sourabh Khandelwal

Microelectron. J., 2019

A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs.

Jason Hodges, Sayed Ali Albahrani, Sourabh Khandelwal

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited).

Sourabh Khandelwal, Yogesh Singh Chauhan, Jason Hodges, Sayed Ali Albahrani

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018