Saurabh Sirohi

According to our database, Saurabh Sirohi authored at least 9 papers between 2010 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers.

Prateek Kumar Sharma, Vaibhav Ruparelia, Saurabh Sirohi, Uppili S. Raghunathan, Venkat Vanukuru, Vibhor Jain

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT.

Beng Woon Lim, Ajay Raman, Saurabh Sirohi

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022

Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs.

Saurabh Sirohi, Beng Woon Lim, Ajay Raman, Frederick A. Anderson

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.

Uppili S. Raghunathan, Saurabh Sirohi, Vaibhav Ruparelia, Prateek Kumar Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, Venkat Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, Kristin Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, Ian McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, John J. Pekarik, Qidi Liu

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2018

Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications.

Saurabh Sirohi, Vibhor Jain, Ajay Raman, Bhargava Teja Nukala, Elan Veeramani, James W. Adkisson, Alvin Joseph

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2016

Unified Model for Sub-Bandgap and Conventional Impact Ionization in RF SOI MOSFETs with Improved Simulator Convergence.

Chandan Yadav, Anupam Dutta, Saurabh Sirohi, Ethirajan Tamilmani, Yogesh Singh Chauhan

Proceedings of the 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, 2016

2014

BSIM6 - Benchmarking the Next-Generation MOSFET Model for RF Applications.

Anupam Dutta, Saurabh Sirohi, Ethirajan Tamilmani, Harshit Agarwal, Yogesh Singh Chauhan, Richard Q. Williams

Proceedings of the 2014 27th International Conference on VLSI Design, 2014

2010

Modeling of High Frequency Noise in SOI MOSFETs.

Muthubalan Varadharajaperumal, Saurabh Sirohi, Sourabh Khandelwal, Ethirajan Tamilmani, Vaidyananthan Subramanian

Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010

RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications.

Shyam Parthasarathy, Amit Ranjan Trivedi, Saurabh Sirohi, Robert A. Groves, Michael Olsen, Yogesh Singh Chauhan, Michael Carroll, Dan Kerr, Ali Tombak, Phil Mason

Proceedings of the VLSI Design 2010: 23rd International Conference on VLSI Design, 2010