Sarvesh H. Kulkarni
According to our database1,
Sarvesh H. Kulkarni
authored at least 14 papers
between 2003 and 2017.
Collaborative distances:
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Bibliography
2017
A 0.9-μm<sup>2</sup> 1T1R Bit Cell in 14-nm High-Density Metal Fuse Technology for High-Volume Manufacturing and In-Field Programming.
IEEE J. Solid State Circuits, 2017
2016
A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS.
IEEE J. Solid State Circuits, 2016
A 0.9um<sup>2</sup> 1T1R bit cell in 14nm SoC process for metal-fuse OTP array with hierarchical bitline, bit level redundancy, and power gating.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
2015
Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process.
Proceedings of the Symposium on VLSI Circuits, 2015
2010
A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μ m <sup>2</sup> <i>1T1R</i> Bit Cell in 32 nm High-k Metal-Gate CMOS.
IEEE J. Solid State Circuits, 2010
2008
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2008
A 1.1 GHz 12 µA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications.
IEEE J. Solid State Circuits, 2008
2007
A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications.
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007
2006
Proceedings of the 2006 International Conference on Computer-Aided Design, 2006
2004
IEEE Trans. Very Large Scale Integr. Syst., 2004
Proceedings of the 2004 International Symposium on Low Power Electronics and Design, 2004
2003
An Implementation of a 32-bit ARM Processor Using Dual Power Supplies and Dual Threshold Voltages.
Proceedings of the 2003 IEEE Computer Society Annual Symposium on VLSI (ISVLSI 2003), 2003
Proceedings of the 40th Design Automation Conference, 2003