Sangwan Nam
According to our database1,
Sangwan Nam
authored at least 6 papers
between 2014 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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2016
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2020
2022
2024
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Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2024
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2021
A 512Gb 3b/Cell 7<sup>th</sup> -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2016
IEEE J. Solid State Circuits, 2016
2015
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming.
IEEE J. Solid State Circuits, 2015
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014