Sanghyun Ku

According to our database, Sanghyun Ku authored at least 3 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement.

Woongrae Kim, Chulmoon Jung, Seong Nyuh Yoo, Duckhwa Hong, Jeongjin Hwang, Jungmin Yoon, Oh-Yong Jung, Joonwoo Choi, Sanga Hyun, Mankeun Kang, Sangho Lee, Dohong Kim, Sanghyun Ku, Donhyun Choi, Nogeun Joo, Sangwoo Yoon, Junseok Noh, Byeongyong Go, Cheolhoe Kim, Sunil Hwang, Mihyun Hwang, Seol-Min Yi, Hyungmin Kim, Sanghyuk Heo, Yeonsu Jang, Kyoungchul Jang, Shinho Chu, Yoonna Oh, Kwidong Kim, Junghyun Kim, Soohwan Kim, Jeongtae Hwang, Sangil Park, Junphyo Lee, In-Chul Jeong, Joohwan Cho, Jonghwan Kim

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2020

A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx.

Dongkyun Kim, Kibong Koo, Yongmi Kim, Dong-Uk Lee, Jaejin Lee, Ki Hun Kwon, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Jong-Sam Kim, Seungwook Oh, Minsu Park, Dain Im, Yongsung Lee, Mingyu Park, Jonghyuck Choi, Junhyun Chun, Kyowon Jin, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Changhyun Kim, Minsik Han

IEEE J. Solid State Circuits, 2020

2019

A 1.1V 1ynm 6.4Gb/s/pin 16Gb DDR5 SDRAM with a Phase-Rotator-Based DLL, High-Speed SerDes and RX/TX Equalization Scheme.

Dongkyun Kim, Minsu Park, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Jaeil Kim, Changhyun Kim, Kyung Whan Kim, Kibong Koo, Seonghwi Song, Yongmi Kim, Dong-Uk Lee, Jaejin Lee, Dae Suk Kim, Ki Hun Kwon, Minsik Han, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Yeonuk Kim, Jong-Sam Kim, Sanghui Kim, Youngsuk Seo, Seungwook Oh, Dain Im, Haksong Kim, Jonghyuck Choi, Jinil Chung, Changhyun Lee, Yongsung Lee, Joo-Hwan Cho, Junhyun Chun, Jonghoon Oh

Proceedings of the IEEE International Solid- State Circuits Conference, 2019