SangHoon Shin

According to our database, SangHoon Shin authored at least 2 papers between 2015 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.

SangHoon Shin, Yen-Pu Chen, Woojin Ahn, Honglin Guo, Byron Williams, Jeff West, Tom Bonifield, Dhanoop Varghese, Srikanth Krishnan, Muhammad Ashraful Alam

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Characterization and reliability of III-V gate-all-around MOSFETs.

Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye

Proceedings of the IEEE International Reliability Physics Symposium, 2015