Sang Wuk Park

According to our database, Sang Wuk Park authored at least 2 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch.

Jaehyun Park, Juhun Park, Kyuman Hwang, Jinchan Yun, Dahye Kim, Sungil Park, Jejune Park, Jinwook Yang, Jae Won Jeong, Chuljin Yun, Jinho Bae, Sam Park, Daihong Huh, Sanghyeon Kim, Seungeun Baek, Suk Yang, Inhae Zoh, Junghan Lee, Tae-sun Kim, Younsu Ha, Sun-Jung Lee, Sang Wuk Park, Bong Jin Kuh, Daewon Ha, Sangjin Hyun, Sujin Ahn, Jaihyuk Song

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2021

A Novel Approach for Semiconductor Etching Process with Inductive Biases.

Sanghoon Myung, Hyunjae Jang, Byungseon Choi, Jisu Ryu, Hyuk Kim, Sang Wuk Park, Changwook Jeong, Daesin Kim

CoRR, 2021