Samuel A. Foertsch

According to our database, Samuel A. Foertsch authored at least 2 papers between 1989 and 1995.

Collaborative distances:

• Dijkstra number of seven.
• Erdős number of six.

1995

Model for yield and manufacturing prediction on VLSI designs for advanced technologies, mixed circuitry, and memories.

Steven M. Domer, Samuel A. Foertsch, Glenn D. Raskin

IEEE J. Solid State Circuits, March, 1995

1989

A bipolar ECL static RAM using polysilicon-diode loaded memory cell.

Bor-Yuan Hwang, Thomas P. Bushey, James A. Kirchgessner, Samuel A. Foertsch, James J. Stipanuk, Larry Marshbanks, Juan A. Hernandez, Eric R. Herald

IEEE J. Solid State Circuits, April, 1989