Sam M.-H. Hsiao

According to our database, Sam M.-H. Hsiao authored at least 2 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Preventing Single-Event Double-Node Upsets by Engineering Change Order in Latch Designs.

Sam M.-H. Hsiao, Amy H.-Y. Tsai, Lowry P.-T. Wang, Aaron C.-W. Liang, Charles H.-P. Wen, Herming Chiueh

Proceedings of the IEEE International Test Conference, 2023

2022

Existence of Single-Event Double-Node Upsets (SEDU) in Radiation-Hardened Latches for Sub-65nm CMOS Technologies.

Sam M.-H. Hsiao, Lowry P.-T. Wang, Aaron C.-W. Liang, Charles H.-P. Wen

Proceedings of the IEEE International Test Conference, 2022