Salvatore M. Amoroso

According to our database, Salvatore M. Amoroso authored at least 12 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development.

Xi-Wei Lin, Salvatore M. Amoroso, Ko-Hsin Lee, Meng Hsuan Ke, Tue Gunst, Pavel Tikhomirov, Plamen Asenov

Proceedings of the IEEE International Memory Workshop, 2024

2018

Progress on carbon nanotube BEOL interconnects.

Benjamin Uhlig, Jie Liang, Jaehyun Lee, Raphael Ramos, Abitha Dhavamani, Nicole Nagy, Jean Dijon, Hanako Okuno, Dipankar Kalita, Vihar P. Georgiev, Asen Asenov, Salvatore M. Amoroso, Liping Wang, Campbell Millar, F. Konemann, Bernd Gotsmann, Goncalo Goncalves, Bingan Chen, Reeturaj Pandey, R. Chen, Aida Todri-Sanial

Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition, 2018

2015

Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations.

Louis Gerrer, Vihar P. Georgiev, Salvatore M. Amoroso, Ewan Towie, A. Asenov

Microelectron. Reliab., 2015

Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits.

A. Asenov, Jie Ding, Dave Reid, Plamen Asenov, Salvatore M. Amoroso, Fikru Adamu-Lema, Louis Gerrer

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow.

Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov

Proceedings of the 45th European Solid State Device Research Conference, 2015

Experimental evidences and simulations of trap generation along a percolation path.

Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review.

Louis Gerrer, Jie Ding, Salvatore M. Amoroso, Fikru Adamu-Lema, Razaidi Hussin, Dave Reid, Campbell Millar, A. Asenov

Microelectron. Reliab., 2014

RTN distribution comparison for bulk, FDSOI and FinFETs devices.

Louis Gerrer, Salvatore M. Amoroso, Razaidi Hussin, Asen Asenov

Microelectron. Reliab., 2014

FDSOI molecular flash cell with reduced variability for low power flash applications.

Vihar P. Georgiev, Salvatore M. Amoroso, Laia Vila-Nadal, Cristoph Busche, Leroy Cronin, Asen Asenov

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Modeling of statistical variability in nanoscale charge-trap flash memories.

Salvatore M. Amoroso

PhD thesis, 2012

Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs.

Louis Gerrer, Stanislav Markov, Salvatore M. Amoroso, Fikru Adamu-Lema, Asen Asenov

Microelectron. Reliab., 2012

Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation.

Salvatore M. Amoroso, Louis Gerrer, Stanislav Markov, Fikru Adamu-Lema, Asen Asenov

Proceedings of the 2012 European Solid-State Device Research Conference, 2012