Saeed Jahdi

Orcid: 0000-0002-6471-0429

According to our database1, Saeed Jahdi authored at least 9 papers between 2011 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

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Bibliography

2024
Impact of Intrinsic Parameter Dispersion on Short-Circuit Reliability of Parallel-Connected Planar and Trench SiC MOSFETs.
IEEE Trans. Ind. Electron., December, 2024

2021
Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET.
Proceedings of the IECON 2021, 2021

2020
The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation.
IEEE Trans. Ind. Electron., 2020

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs.
IEEE Trans. Ind. Electron., 2020

2016
Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules.
IEEE Trans. Ind. Electron., 2016

2015
Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery.
IEEE Trans. Ind. Electron., 2015

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs.
IEEE Trans. Ind. Electron., 2015

2013
The impact of silicon carbide technology on grid-connected Distributed Energy resources.
Proceedings of the 4th IEEE PES Innovative Smart Grid Technologies Europe, 2013

2011
DG islanding operation detection methods in combination of harmonics protection schemes.
Proceedings of the 2nd IEEE PES International Conference and Exhibition on "Innovative Smart Grid Technologies", 2011


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