Sachin Yadav

According to our database, Sachin Yadav authored at least 7 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers.

Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs.

Rana Y. El Kashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications.

Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert

Proceedings of the IEEE International Reliability Physics Symposium, 2022

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance.

Abhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer.

AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana Y. El Kashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities.

Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert

Proceedings of the International Conference on IC Design and Technology, 2021

Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates.

Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021