S. Y. Siah

According to our database, S. Y. Siah authored at least 6 papers between 2008 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities.

Vinayak Bharat Naik, J. H. Lim, Kazutaka Yamane, J. Kwon, Behin-Aein B., N. L. Chung, S. K, R. Chao, C. Chiang, Y. Huang, L. Pu, Yuichi Otani, Suk Hee Jang, Nivetha Balasankaran, Wah-Peng Neo, T. Ling, Jia Wen Ting, Hongsik Yoon, Johannes Müller, Bert Pfefferling, Oliver Kallensee, Thomas Merbeth, Chim Seng Seet, J. Wong, Y. S. You, Steven Soss, T. H. Chan, S. Y. Siah

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2012

The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.

W. S. Lau, Peizhen Yang, S. Y. Siah, L. Chan

Microelectron. Reliab., 2012

2010

Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors.

W. S. Lau, Peizhen Yang, Eng Hua Lim, Yee Ling Tang, Seow Wei Lai, V. L. Lo, S. Y. Siah, L. Chan

Microelectron. Reliab., 2010

2009

Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors.

W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan

Microelectron. Reliab., 2009

2008

An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory.

W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan

Microelectron. Reliab., 2008

A study of the linearity between I_on and log I_off of modern MOS transistors and its application to stress engineering.

W. S. Lau, Peizhen Yang, C. W. Eng, V. Ho, C. H. Loh, S. Y. Siah, D. Vigar, L. Chan

Microelectron. Reliab., 2008