S. T. Lee

According to our database, S. T. Lee authored at least 5 papers between 1995 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling.

J.-H. Yoo, H.-B. Jo, I.-G. Lee, S.-M. Choi, J.-M. Baek, S. T. Lee, H. Jang, M. W. Kong, H. H. Kim, H. J. Lee, H.-J. Kim, H.-S. Jeong, W.-S. Park, D.-H. Ko, S. H. Shin, H.-M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, K.-Y. Shin, T.-W. Kim, J.-K. Shin, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets.

H.-B. Jo, I.-G. Lee, J.-M. Baek, S. T. Lee, S.-M. Choi, H.-J. Kim, H.-S. Jeong, W.-S. Park, J.-H. Yoo, H.-Y. Lee, D. Y. Yun, S.-W. Son, D.-H. Ko, Tae-Woo Kim, H.-M. Kwon, S.-K. Kim, Jun-Gyu Kim, J. Yun, T. Kim, J. H. Lee, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2008

16, 000-RPM Interior Permanent Magnet Reluctance Machine with Brushless Field Excitation.

J. S. Hsu, T. A. Burress, S. T. Lee, R. H. Wiles, C. L. Coomer, John W. McKeever, D. J. Adams

Proceedings of the Industry Applications Society Annual Meeting, 2008

2002

Impacts of random noise and specification on estimates of capacity derived from data envelopment analysis.

D. S. Holland, S. T. Lee

Eur. J. Oper. Res., 2002

1995

A reconfigurable low-voltage low-power building block for artificial neural networks.

S. T. Lee, K. T. Lau

Proceedings of International Conference on Neural Networks (ICNN'95), Perth, WA, Australia, November 27, 1995