S. Straub

According to our database, S. Straub authored at least 3 papers between 2007 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor.

D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2016

Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges.

D. H. Triyoso, Rick Carter, J. Kluth, K. Hempel, M. Gribelyuk, L. Kang, A. Kumar, B. Mulfinger, P. Javorka, K. Punchihewa, A. Child, T. McArdle, J. Holt, S. Straub, R. Sporer, P. Chen

Proceedings of the International Conference on IC Design and Technology, 2016

2007

Silicon nanocrystal non-volatile memory for embedded memory scaling.

R. F. Steimle, R. Muralidhar, R. Rao, M. Sadd, C. T. Swift, Jane Yater, B. Hradsky, S. Straub, H. Gasquet, L. Vishnubhotla, E. J. Prinz, T. Merchant, B. Acred, K. Chang, B. E. White Jr.

Microelectron. Reliab., 2007