S. Pae

According to our database, S. Pae authored at least 6 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology.

Sunhang Lee, Nam-Hyun Lee, G.-J. Kim, J. Ahn, Ik-Hwan Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, SB. Ko, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Thermo-Mechanical Reliability Characteristics of 8H HBM3.

Jinsoo Bae, H. G. Noh, S. J. Yoo, I. J. Choi, G. H. Bae, Y. M. Shim, S. G. Lee, H. Jang, S. M. Lee, G. H. Chang, K. S. Kwon, C. B. Yoon, S. Y. Lee, J. W. Pyun, H. J. Kim, S. B. Ko, Y. C. Hwang, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Reliability Improvement with Optimized BEOL Process in Advanced DRAM.

J. H. Lee, B. W. Woo, Y. M. Lee, N. H. Lee, S. H. Lee, Y. S. Lee, H. S. Kim, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC.

S. Lee, N.-H. Lee, K. W. Lee, J. H. Kim, J. H. Jin, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMs.

Sungmock Ha, S. Lee, G. H. Bae, D. S. Lee, S. H. Kim, B. W. Woo, N.-H. Lee, Y. S. Lee, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology.

Nam-Hyun Lee, Sunhang Lee, S.-H. Kim, G.-J. Kim, K. W. Lee, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2022