S. Intekhab Amin

According to our database, S. Intekhab Amin authored at least 5 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of six.

2024

Effect of ambipolarity suppression in PNPN TFET with dopant segregated Schottky-drain technique.

Aadil Anam, S. Intekhab Amin, Dinesh Prasad, Naveen Kumar, Sunny Anand

Microelectron. J., 2024

Novel III-V inverted T-channel TFET with dual-gate impact on line tunneling, with and without negative capacitance.

Aadil Anam, S. Intekhab Amin, Dinesh Prasad

Microelectron. J., 2024

2023

Temperature Sensitivity and Reliability Study of Symmetrical U-Shaped Gate Line TFET: RF/Analog and Linearity Performance Analysis.

Aadil Anam, S. Intekhab Amin, Dinesh Prasad

Proceedings of the IEEE International Symposium on Smart Electronic Systems, 2023

2021

Design and investigation of negative capacitance-based core-shell dopingless nanotube tunnel field-effect transistor.

Apoorva, Naveen Kumar, S. Intekhab Amin, Sunny Anand

IET Circuits Devices Syst., 2021

Simulation study and comparative analysis of proposed novel hybrid DG-TFET with conventional TFETs structures for improved performance.

Aadil Anam, S. Intekhab Amin, Dinesh Prasad

Proceedings of the IEEE International Symposium on Smart Electronic Systems, 2021