S. H. Shin

According to our database, S. H. Shin authored at least 2 papers in 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling.

J.-H. Yoo, H.-B. Jo, I.-G. Lee, S.-M. Choi, J.-M. Baek, S. T. Lee, H. Jang, M. W. Kong, H. H. Kim, H. J. Lee, H.-J. Kim, H.-S. Jeong, W.-S. Park, D.-H. Ko, S. H. Shin, H.-M. Kwon, S. K. Kim, J. G. Kim, J. Yun, T. Kim, K.-Y. Shin, T.-W. Kim, J.-K. Shin, J.-H. Lee, C.-S. Shin, K.-S. Seo, Dae-Hyun Kim

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -.

Jung-Won Han, S. H. Park, Moonyoung Jeong, K. N. Kim, H. J. Kim, J. C. Shin, S. M. Park, S. H. Shin, S. W. Park, K. S. Lee, J. H. Lee, S. H. Kim, B. C. Kim, Myoung H. Jung, I. Y. Yoon, H. Kim, S. U. Jang, K. J. Park, Y. K. Kim, I. G. Kim, J. H. Oh, S. Y. Han, B. S. Kim, Bong Jin Kuh, J. M. Park

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023