S. Ganguli

According to our database, S. Ganguli authored at least 3 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2023

High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substrates.

Adam Miesle, A. E. Islam, E. Shin, G. Subramanyam, Kevin D. Leedy, S. Ganguli, Daniel Dryden, Kyle J. Liddy, Kelson D. Chabak, Andrew J. Green

Proceedings of the Device Research Conference, 2023

2022

Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates.

Ahmad Islam, Adam Miesle, M. Dietz, Kevin D. Leedy, S. Ganguli, G. Subramanyam, Weisong Wang, Nicholas Sepelak, Daniel Dryden, Stephen E. Tetlak, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak

Proceedings of the Device Research Conference, 2022

2021

Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing.

A. E. Islam, Kevin D. Leedy, Neil A. Moser, S. Ganguli, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak

Proceedings of the Device Research Conference, 2021