S. E. Tyaginov

According to our database, S. E. Tyaginov authored at least 4 papers between 2004 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2007

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon.

I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler

Microelectron. Reliab., 2007

2006

The post-damage behavior of a MOS tunnel emitter transistor.

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Microelectron. Reliab., 2006

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures.

M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov

Microelectron. J., 2006

2004

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness.

R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler

Microelectron. Reliab., 2004