S. Denorme

According to our database, S. Denorme authored at least 3 papers between 2009 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.

A. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization.

M. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, Eric Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, Simon Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola

Proceedings of the 45th European Solid State Device Research Conference, 2015

2009

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.

Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, Loan Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki

Proceedings of the 35th European Solid-State Circuits Conference, 2009