S. Berberich

According to our database, S. Berberich authored at least 1 paper in 2001.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2001

The electron irradiation effects on silicon gate dioxide used for power MOS devices.

Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu

Microelectron. Reliab., 2001