Ryutaro Yasuhara

According to our database, Ryutaro Yasuhara authored at least 12 papers between 2013 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

TaOx ReRAM as a Highly-Reliable Embedded Memory and Its Application to Edge AI.

Ryutaro Yasuhara

Proceedings of the 2020 International Symposium on VLSI Design, Automation and Test, 2020

2019

Reliability Issues in Analog ReRAM Based Neural-Network Processor.

Ryutaro Yasuhara, Takashi Ono, Reiji Mochida, Shunsaku Muraoka, Kazuyuki Kouno, Koji Katayama, Yuriko Hayata, Masayoshi Nakayama, Hitoshi Suwa, Yukio Hayakawa, Takumi Mikawa, Yasushi Gohou, Shinichi Yoneda

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Comprehensive Analysis of Data-Retention and Endurance Trade-Off of 40nm TaOx-based ReRAM.

Shouhei Fukuyama, Atsuna Hayakawa, Ryutaro Yasuhara, Shinpei Matsuda, Hiroshi Kinoshita, Ken Takeuchi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify.

Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara, Ken Takeuchi

Proceedings of the Non-Volatile Memory Technology Symposium, 2018

Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM.

Shouhei Fukuyama, Kazuki Maeda, Shinpei Matsuda, Ken Takeuchi, Ryutaro Yasuhara

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-based ReRAM.

Kazuki Maeda, Shinpei Matsuda, Ken Takeuchi, Ryutaro Yasuhara

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Study of error repeatability and recovery in 40nm TaOx ReRAM.

Takashi Inose, Seiichi Aritome, Ryutaro Yasuhara, Satoshi Mishima, Ken Takeuchi

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application.

Yukio Hayakawa, Atsushi Himeno, Ryutaro Yasuhara, W. Boullart, E. Vecchio, T. Vandeweyer, T. Witters, D. Crotti, M. Jurczak, S. Fujii, S. Ito, Y. Kawashima, Yuuichirou Ikeda, Akifumi Kawahara, Ken Kawai, Zhiqiang Wei, Shunsaku Muraoka, Kazuhiko Shimakawa, Takumi Mikawa, Shinichi Yoneda

Proceedings of the Symposium on VLSI Circuits, 2015

A new prediction method for ReRAM data retention statistics based on 3D filament structures.

Zhiqiang Wei, Koji Katayama, Shunsaku Muraoka, Ryutaro Yasuhara, Takumi Mikawa, Koji Eriguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Quantitative method for estimating characteristics of conductive filament in ReRAM.

Zhiqiang Wei, Ryutaro Yasuhara, Koji Katayama, Takumi Mikawa, Takeki Ninomiya, Shunsaku Muraoka

Proceedings of the IEEE International Symposium on Circuits and Systemss, 2014

Highly-reliable TaOx reram technology using automatic forming circuit.

Ken Kawai, Akifumi Kawahara, Ryutaro Yasuhara, Shunsaku Muraoka, Zhiqiang Wei, Ryotaro Azuma, Kouhei Tanabe, Kazuhiko Shimakawa

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

2013

Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM.

Akifumi Kawahara, Ken Kawai, Yuuichirou Ikeda, Yoshikazu Katoh, Ryotaro Azuma, Yuhei Yoshimoto, Kouhei Tanabe, Zhiqiang Wei, Takeki Ninomiya, Koji Katayama, Ryutaro Yasuhara, Shunsaku Muraoka, Atsushi Himeno, Naoki Yoshikawa, Hideaki Murase, Kazuhiko Shimakawa, Takeshi Takagi, Takumi Mikawa, Kunitoshi Aono

Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013