Ryuji Nishihara
According to our database1,
Ryuji Nishihara
authored at least 2 papers
between 2005 and 2007.
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Bibliography
2007
A PND (PMOS-NMOS-Depletion MOS) Type Single Poly Gate Non-Volatile Memory Cell Design with a Differential Cell Architecture in a Pure CMOS Logic Process for a System LSI.
IEICE Trans. Electron., 2007
2005
A 400-MHz random-cycle dual-port interleaved DRAM (D<sup>2</sup>RAM) with standard CMOS Process.
IEEE J. Solid State Circuits, 2005