Ryoichi Ishihara

According to our database, Ryoichi Ishihara authored at least 8 papers between 2006 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2024

Multi-level forming-free HfO2-based ReRAM for energy-efficient computing.

Erbing Hua, Heba Abunahla, Georgi Gaydadjiev, Said Hamdioui, Ryoichi Ishihara

Proceedings of the Device Research Conference, 2024

2015

Design dependent SRAM PUF robustness analysis.

Mafalda Cortez, Said Hamdioui, Ryoichi Ishihara

Proceedings of the 16th Latin-American Test Symposium, 2015

2014

Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics.

Ryoichi Ishihara, Jin Zhang, Miki Trifunovic, Jaber Derakhshandeh, Negin Golshani, Daniel M. R. Tajari Mofrad, Tao Chen, Kees Beenakker, Tatsuya Shimoda

IEICE Trans. Electron., 2014

2011

Low-temperature bottom-up integration of carbon nanotubes for vertical interconnects in monolithic 3D integrated circuits.

Sten Vollebregt, Ryoichi Ishihara, Johan van der Cingel, Kees Beenakker

Proceedings of the 2011 IEEE International 3D Systems Integration Conference (3DIC), Osaka, Japan, January 31, 2011

2010

Monolithic 3D integration of SRAM and image sensor using two layers of single grain silicon.

Negin Golshani, Jaber Derakhshandeh, Ryoichi Ishihara, C. I. M. Beenakker, Michael Robertson, Thomas Morrison

Proceedings of the IEEE International Conference on 3D System Integration, 2010

2008

An Assessment of µ-Czochralski, Single-Grain Silicon Thin-Film Transistor Technology for Large-Area, Sensor and 3-D Electronic Integration.

Nitz Saputra, Mina Danesh, Alessandro Baiano, Ryoichi Ishihara, John R. Long, Nobuo Karaki, Satoshi Inoue

IEEE J. Solid State Circuits, 2008

2007

Single-grain Si thin-film transistors for analog and RF circuit applications.

Nitz Saputra, Mina Danesh, Alessandro Baiano, Ryoichi Ishihara, John R. Long, Wim Metselaar, C. I. M. Beenakker, Nobuo Karaki, Y. Hiroshima, Satoshi Inoue

Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2006

A Novel Selected Area Laser Assisted (SALA) System for Crystallization and Doping Processes in Low-Temperature Poly-Si Thin-Film Transistors.

Ryoichi Ishihara, Arie Glazer, Yoel Raab, Peter Rusian, Mannie Dorfan, Benzi Lavi, Ilya Leizerson, Albert Kishinevsky, Yvonne Van Andel, Xin Cao, Wim Metselaar, Kees Beenakker, Sara Stolyarova, Yael Nemirovsky

IEICE Trans. Electron., 2006