Ryo Ikoma

According to our database, Ryo Ikoma authored at least 3 papers between 2016 and 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET.

Takamasa Kawanago, Tomoaki Oba, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Radical oxidation process for hybrid SAM/HfOx gate dielectrics in MoS2 FETs.

Takamasa Kawanago, Ryo Ikoma, Tomoaki Oba, Hiroyuki Takagi

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics.

Takamasa Kawanago, Ryo Ikoma, Du Wanjing, Shunri Oda

Proceedings of the 46th European Solid-State Device Research Conference, 2016