Ryan Lu

According to our database, Ryan Lu authored at least 6 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Layout Guidelines against Charging Damage from the Well-Side Antennas in Separated Power Domains.

Hsi-Yu Kuo, Yu-Lin Chu, Hung-Da Dai, Chun-Chi Wang, Pei-Jung Lin, Shu-Cheng Kuo, Ethan Guo, Ya-Min Zhang, Yu-Ti Su, Chia-Lin Hsu, Kuan-Hung Chen, Tsung-Yuan Chen, Te-Liang Li, Ray Huang, Kuo-Ji Chen, Ming-Hsiang Song, Ryan Lu, Kejun Xia

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Reliability Challenges from 2.5D to 3DIC in Advanced Package Development.

Ryan Lu, Yao-Chun Chuang, Jyun-Lin Wu, Jun He

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Protection Schemes for Plasma Induced Damage from Well-Side Antennas.

Hsi-Yu Kuo, Yu-Lin Chu, Hung-Da Dai, Chun-Chi Wang, Pei-Jung Lin, Ethan Guo, Yu-Ti Su, Chia-Lin Hsu, Kuan-Hung Chen, Tsung-Yuan Chen, Ryan Lu, Victor Liang, Kuo-Ji Chen, Kejun Xia

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019

A Novel Constant E-Field Methodology for Intrinsic TDDB Lifetime Projection.

A. S. Teng, C. W. Lin, M. N. Chang, Aaron Wang, Ryan Lu

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors.

D. S. Huang, J. H. Lee, Y. S. Tsai, Y. F. Wang, Y. S. Huang, C. K. Lin, Ryan Lu, Jun He

Proceedings of the IEEE International Reliability Physics Symposium, 2018

The physical mechanism investigation of off-state drain bias TDDB and its implication in advance HK/MG FinFETs.

I. K. Chen, S. C. Chen, S. Mukhopadhyay, D. S. Huang, J. H. Lee, Y. S. Tsai, Ryan Lu, Jun He

Proceedings of the IEEE International Reliability Physics Symposium, 2018