Russell D. Dupuis

Affiliations:
  • Georgia Institute of Technology, Atlanta GA, USA


According to our database1, Russell D. Dupuis authored at least 4 papers between 1973 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 1987, "For pioneering work in metalorganic chemical vapor deposition and design of epitaxial crystal growth reactors for deposition and design of epitaxial crystal growth reactors for high-quality semiconductor devices.".

Timeline

Legend:

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Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2018
Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation.
Proceedings of the 76th Device Research Conference, 2018

2013
III-V Semiconductor Quantum-Well Devices Grown by Metalorganic Chemical Vapor Deposition.
Proc. IEEE, 2013

50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue].
Proc. IEEE, 2013

1973
Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide-Phosphide and Indium-Gallium Phosphide
PhD thesis, 1973


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