Rui Zhang

Orcid: 0000-0002-5433-7616

Affiliations:

Zhejiang University, College of Electronic Engineering and Information Science, Hangzhou, China
The University of Tokyo, Japan (PhD 2012)

According to our database¹, Rui Zhang authored at least 4 papers between 2015 and 2018.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of five.

Timeline

Legend:

Book

In proceedings

Article

PhD thesis

Dataset

Other

Bibliography

2018

Ge CMOS technology with advanced interface and junction engineering.

[BibT_eX]

[DOI]

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2017

NiGe metal source/drain Ge pMOSFETs for future high performance VLSI circuits applications.

[BibT_eX]

[DOI]

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2016

Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2016

2015

PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Rui Zhang

Timeline

Legend:

Links

Online presence:

On csauthors.net:

Bibliography

Loading...