Rüdiger Quay

Orcid: 0000-0002-3003-0134

According to our database¹, Rüdiger Quay authored at least 25 papers between 2001 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

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Book

In proceedings

Article

PhD thesis

Dataset

Other

Bibliography

2024

32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz.

[BibT_eX]

[DOI]

Proceedings of the Device Research Conference, 2024

ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies.

[BibT_eX]

[DOI]

Cristina Maurette-Blasini

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2023

Three-Phase Motor Inverter and Current Sensing GaN Power IC.

[BibT_eX]

[DOI]

Sensors, July, 2023

X-Band 100-W High-Voltage GaN Internally Matched FET with Low Gain Compression.

[BibT_eX]

[DOI]

Sebastian Krause

Rüdiger Quay

Proceedings of the IEEE International Geoscience and Remote Sensing Symposium, 2023

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz.

[BibT_eX]

[DOI]

Proceedings of the Device Research Conference, 2023

Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications.

[BibT_eX]

[DOI]

Cristina Maurette-Blasini

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2021

Building Blocks for GaN Power Integration.

[BibT_eX]

[DOI]

IEEE Access, 2021

2020

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

2017

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

2016

Performance of tri-gate AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2015

A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE Radio and Wireless Symposium, 2015

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

2011

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2011

Multiband Doherty RF power amplifier.

[BibT_eX]

[DOI]

Proceedings of the AFRICON 2011, 2011

2010

Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2010

2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.

[BibT_eX]

[DOI]

Einar Örn Sveinbjörnsson

Microelectron. Reliab., 2009

2006

InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2006

InP DHBT Based IC Technology for over 80 Gbit/s Data Communications.

[BibT_eX]

[DOI]

IEICE Trans. Electron., 2006

2004

Reliability of 70 nm metamorphic HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2004

2003

A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE.

[BibT_eX]

[DOI]

Alexandre Bessemoulin

IEEE J. Solid State Circuits, 2003

2001

Industrial application of heterostructure device simulation.

[BibT_eX]

[DOI]

Vassil Palankovski

Rüdiger Quay

Siegfried Selberherr

IEEE J. Solid State Circuits, 2001

Rüdiger Quay

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