Ronald D. Schrimpf
Orcid: 0000-0001-7419-2701Affiliations:
- Vanderbilt University, Nashville, TN, USA
According to our database1,
Ronald D. Schrimpf
authored at least 21 papers
between 2001 and 2024.
Collaborative distances:
Collaborative distances:
Awards
IEEE Fellow
IEEE Fellow 2000, "For contributions to the understanding and the modeling of physical mechanisms governing the response of semiconductor devices to radiation exposure.".
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Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
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on orcid.org
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Bibliography
2024
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.
Proceedings of the Device Research Conference, 2023
2021
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.
Proceedings of the 14th IEEE International Conference on ASIC, 2021
2018
Microelectron. J., 2018
2015
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
2014
Microelectron. Reliab., 2014
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs.
Microelectron. Reliab., 2014
2013
An efficient technique to select logic nodes for single event transient pulse-width reduction.
Microelectron. Reliab., 2013
2012
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.
Microelectron. Reliab., 2012
2011
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH<sub>3</sub>-rich conditions.
Microelectron. Reliab., 2011
Microelectron. Reliab., 2011
Microelectron. Reliab., 2011
2009
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling.
Proceedings of the 35th European Solid-State Circuits Conference, 2009
2008
Microelectron. Reliab., 2008
2007
Microelectron. Reliab., 2007
Microelectron. Reliab., 2007
2006
Microelectron. Reliab., 2006
2005
2001
A generalized model for the lifetime of microelectronic components, applied to storage conditions.
Microelectron. Reliab., 2001
Microelectron. Reliab., 2001