Romain Laffont

According to our database, Romain Laffont authored at least 12 papers between 2002 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

Effect of AC stress on oxide TDDB and trapped charge in interface states.

Benjamin Rebuffat, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Romain Laffont

Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

2013

DCG-FGT transistor: Retention study of Floating Gate charge.

Abderrezak Marzaki, V. Bidal, Romain Laffont, Wenceslas Rahajandraibe, Jean-Michel Portal, Rachid Bouchakour

Proceedings of the IEEE 56th International Midwest Symposium on Circuits and Systems, 2013

Effect of ions presence in the SiOCH inter metal dielectric structure.

Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Investigation of the effects of constant voltage stress on thin SiO₂ layers using dynamic measurement protocols.

Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier

Microelectron. Reliab., 2012

A new adustable Schmitt Trigger based on Dual Control Gate-Floating Gate Transistor (DCG-FGT).

Abderrezak Marzaki, V. Bidal, Romain Laffont, Wenceslas Rahajandraibe, Jean-Michel Portal, Rachid Bouchakour

Proceedings of the 55th IEEE International Midwest Symposium on Circuits and Systems, 2012

PSP based DCG-FGT transistor Model: Full characterization procedure.

Abderrezak Marzaki, V. Bidal, Romain Laffont, Wenceslas Rahajandraibe, Jean-Michel Portal, Rachid Bouchakour

Proceedings of the International Symposium on Communications and Information Technologies, 2012

2011

PSP based DCG-FGT transistor model including characterization procedure.

Abderrezak Marzaki, V. Bidal, Romain Laffont, Wenceslas Rahajandraibe, Jean-Michel Portal, Rachid Bouchakour

Proceedings of the 18th IEEE International Conference on Electronics, Circuits and Systems, 2011

2010

Leakage paths identification in NVM using biased data retention.

Jérémy Postel-Pellerin, Romain Laffont, Gilles Micolau, Frédéric Lalande, Arnaud Régnier, Bernard Bouteille

Microelectron. Reliab., 2010

2009

A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories.

M. Roca, Romain Laffont, Gilles Micolau, Frédéric Lalande, O. Pizzuto

Microelectron. Reliab., 2009

2007

A new method to quantify retention-failed cells of an EEPROM CAST.

Claire Le Roux, Laurent Lopez, Abdellatif Firiti, Jean-Luc Ogier, Frédéric Lalande, Romain Laffont, Gilles Micolau

Microelectron. Reliab., 2007

2006

MM11 based flash memory cell model including characterization procedure.

B. Saillet, Arnaud Régnier, Jean-Michel Portal, B. Delsuc, Romain Laffont, Pascal Masson, Rachid Bouchakour

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2006), 2006

2002

Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact.

Romain Laffont, J. Razafindramora, Pierre Canet, Rachid Bouchakour, Jean-Michel Mirabel

Proceedings of the 10th IEEE International Workshop on Memory Technology, 2002