Roberto Modica

According to our database, Roberto Modica authored at least 6 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs.

Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

SiCILIA - Silicon Carbide Detectors for Intense Luminosity Investigations and Applications.

Salvatore Tudisco, Francesco La Via, Clementina Agodi, Carmen Altana, Giacomo Borghi, Maurizio Boscardin, Giancarlo Bussolino, Lucia Calcagno, Massimo Camarda, Francesco Cappuzzello, Diana Carbone, Salvatore Cascino, Giovanni Casini, Manuela Cavallaro, Caterina Ciampi, Giuseppe Cirrone, Giacomo Cuttone, Alberto Fazzi, Dario Giove, Giuseppe Gorini, Luca Labate, Gaetano Lanzalone, Grazia Litrico, Giuseppe Longo, Domenico Lo Presti, Marco Mauceri, Roberto Modica, Maurizio Moschetti, Annamaria Muoio, Franco Musumeci, Gabriele Pasquali, Giada Petringa, Nicolò Piluso, Giacomo Poggi, Stefania Privitera, Sebastiana Puglia, Valeria Puglisi, Marica Rebai, Sabina Ronchin, Antonello Santangelo, Andrea Stefanini, Antonio Trifirò, Massimo Zimbone

Sensors, 2018