Rishu Chaujar
Orcid: 0000-0002-0161-8449
According to our database1,
Rishu Chaujar
authored at least 17 papers
between 2007 and 2023.
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Bibliography
2023
Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design.
Microelectron. J., September, 2023
Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization.
Microelectron. J., 2023
2022
Impact of tunnel gate process variations on analog/radio frequency (microwave) and small signal parameters of hetero-material tunneling interfaced charge plasma junctionless tunnel field effect transistor.
Int. J. Circuit Theory Appl., 2022
Compatibility of a Truncated Fin-FinFET as a k-modulated Biosensor with Optimum parameters for Pre-emptive Diagnosis of Diseases.
Comput. Electr. Eng., 2022
2020
Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications.
IET Circuits Devices Syst., 2020
Effects of Neural Mechanisms of Pretask Resting EEG Alpha Information on Situational Awareness: A Functional Connectivity Approach.
Hum. Factors, 2020
Proceedings of the 9th International Conference on Modern Circuits and Systems Technologies, 2020
2019
Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications.
Proceedings of the TENCON 2019, 2019
Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications.
Proceedings of the 8th International Conference on Modern Circuits and Systems Technologies, 2019
2018
Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications.
Proceedings of the TENCON 2018, 2018
2016
Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability.
Microelectron. Reliab., 2016
Microelectron. J., 2016
2014
Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency.
Proceedings of the 2014 Fifth International Symposium on Electronic System Design, 2014
2012
Microelectron. Reliab., 2012
2011
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.
Microelectron. Reliab., 2011
2008
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency.
Microelectron. J., 2008
2007
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.
Microelectron. J., 2007