Rino Choi

According to our database, Rino Choi authored at least 9 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO Capacitors.

Minjong Lee, Jin-Hyun Kim, Dan N. Le, Seojun Lee, Si-Un Song, Rino Choi, Youngbae Ahn, Seung Wook Ryu, Pil-Ryung Cha, Chang-Yong Nam, Seongbin Park, Jongmug Kang, Si Joon Kim, Jiyoung Kim

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2022

3-Dimensional Integration with High Interconnection Density.

Rino Choi, Ye-Eun Hong, Anh Duy Nguyen

Proceedings of the International Conference on IC Design and Technology, 2022

2016

Characterization of high pressure hydrogen annealing effect on polysilicon channel field effect transistors using isothermal deep level trap spectroscopy.

Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jae-Won Choi, Soo-Yeun Han, Jung-Yeon Kim, Rino Choi, Changhwan Choi

Proceedings of the International Conference on IC Design and Technology, 2016

2008

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.

R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis

Microelectron. Reliab., 2008

2007

Electrical characterization and analysis techniques for the high-kappa era.

Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker

Microelectron. Reliab., 2007

Applications of DCIV method to NBTI characterization.

Arnost Neugroschel, Gennadi Bersuker, Rino Choi

Microelectron. Reliab., 2007

2005

Probing stress effects in HfO₂ gate stacks with time dependent measurements.

Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff

Microelectron. Reliab., 2005

2004

Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure.

Y. H. Kim, Rino Choi, R. Jha, J. H. Lee, Veena Misra, J. C. Lee

Microelectron. Reliab., 2004

Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics.

Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto

Microelectron. Reliab., 2004