Riichiro Takemura

According to our database1, Riichiro Takemura authored at least 20 papers between 2001 and 2012.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2012
Spin-transfer torque RAM technology: Review and prospect.
Microelectron. Reliab., 2012

Fluctuation Tolerant Charge-Integration Read Scheme for Ultrafast DNA Sequencing with Nanopore Device.
IEICE Trans. Electron., 2012

Small-Sized Leakage-Controlled Gated Sense Amplifier for 0.5-V Multi-Gigabit DRAM Arrays.
IEICE Trans. Electron., 2012

0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMs.
IEICE Trans. Electron., 2012

A Low-<i>V</i><sub>t</sub> Small-Offset Gated-Preamplifier for Sub-1-V DRAM Mid-Point Sensing.
IEICE Trans. Electron., 2012

Fluctuation tolerant read scheme for ultrafast DNA sequencing with nanopore device.
Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012

2011
Device-conscious circuit designs for 0.5-V high-speed memory-rich nanoscale CMOS LSIs.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011

2010
A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and '1'/'0' Dual-Array Equalized Reference Scheme.
IEEE J. Solid State Circuits, 2010

2009
Low-Vt small-offset gated preamplifier for sub-1V gigabit DRAM arrays.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008
2 Mb SPRAM (SPin-Transfer Torque RAM) With Bit-by-Bit Bi-Directional Current Write and Parallelizing-Direction Current Read.
IEEE J. Solid State Circuits, 2008

2007
Long-Retention-Time, High-Speed DRAM Array with 12-<i>F</i><sup>2</sup> Twin Cell for Sub 1-V Operation.
IEICE Trans. Electron., 2007

2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read.
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

SPRAM (SPin-transfer torque RAM) design and its impact on digital systems.
Proceedings of the 14th IEEE International Conference on Electronics, 2007

Low-Voltage Limitations and Challenges of Memory-Rich Nano-Scale CMOS LSIs.
Proceedings of the 14th IEEE International Conference on Electronics, 2007

2006
Concordant memory design: an integrated statistical design approach for multi-gigabit DRAM.
IEEE J. Solid State Circuits, 2006

A 0.5-V FD-SOI twin-cell DRAM with offset-free dynamic-V<sub><i>T</i></sub> sense amplifiers.
Proceedings of the 2006 International Symposium on Low Power Electronics and Design, 2006

2005
A large-scale and low-power CAM architecture featuring a one-hot-spot block code for IP-address lookup in a network router.
IEEE J. Solid State Circuits, 2005

A ternary/quaternary CAM architecture with an NPU-side IP-address compression scheme and a dynamic re-configurable CODEC scheme for large-scale flow-table lookup.
Proceedings of IEEE International Conference on Communications, 2005

Phase change RAM operated with 1.5-V CMOS as low cost embedded memory.
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

2001
A multigigabit DRAM technology with 6F<sup>2</sup> open-bitline cell, distributed overdriven sensing, and stacked-flash fuse.
IEEE J. Solid State Circuits, 2001


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