Richard Lossy

Orcid: 0000-0002-0711-0945

According to our database1, Richard Lossy authored at least 7 papers between 2004 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

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Bibliography

2018
Design and Development of Gallium Nitride HEMTs Based Liquid Sensor.
Proceedings of the 2018 IEEE SENSORS, New Delhi, India, October 28-31, 2018, 2018

2014
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.
Microelectron. Reliab., 2014

2012
Reliability studies on GaN HEMTs with sputtered Iridium gate module.
Microelectron. Reliab., 2012

2011
Reliability issues of GaN based high voltage power devices.
Microelectron. Reliab., 2011

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements.
Microelectron. Reliab., 2011

2009
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.
Microelectron. Reliab., 2009

2004
Reliability Investigation of Gallium Nitride HEMT.
Microelectron. Reliab., 2004


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