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Rengie Mark D. Mailig

According to our database1, Rengie Mark D. Mailig authored at least 5 papers between 2019 and 2020.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

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Links

On csauthors.net:

Bibliography

2020
The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process.
[BibTeX]
[DOI]
Rengie Mark D. Mailig
,
Min Gee Kim
,
Shun'ichiro Ohmi
IEICE Trans. Electron., 2020

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO<sub>2</sub> Utilizing Pt Gate Electrodes.
[BibTeX]
[DOI]
Min Gee Kim
,
Masakazu Kataoka
,
Rengie Mark D. Mailig
,
Shun'ichiro Ohmi
IEICE Trans. Electron., 2020

Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering.
[BibTeX]
[DOI]
Shun'ichiro Ohmi
,
Min Gee Kim
,
Masakazu Kataoka
,
Masaki Hayashi
,
Rengie Mark D. Mailig
Proceedings of the 2020 Device Research Conference, 2020

2019
Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process.
[BibTeX]
[DOI]
Shun'ichiro Ohmi
,
Yuya Tsukamoto
,
Rengie Mark D. Mailig
IEICE Trans. Electron., 2019

Low Temperature Formation of Pd<sub>2</sub>Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process.
[BibTeX]
[DOI]
Rengie Mark D. Mailig
,
Shun'ichiro Ohmi
IEICE Trans. Electron., 2019


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