René Escoffier

Orcid: 0000-0003-2312-9299

According to our database1, René Escoffier authored at least 3 papers between 2009 and 2022.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of five.

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2022
Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018
A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2009
Source electrode evolution of a low voltage power MOSFET under avalanche cycling.
Microelectron. Reliab., 2009


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