Razali Ismail

According to our database, Razali Ismail authored at least 13 papers between 1990 and 2014.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2014

Analytical model for threshold voltage of double gate bilayer graphene field effect transistors.

Mehdi Saeidmanesh, Meisam Rahmani, H. Karimi Feiz Karimi, M. Khaledian, Razali Ismail

Microelectron. Reliab., 2014

2013

Simulation of Trigate FET with Semi-Cylindrical Channel to Reduce Corner Effect.

Fatimah Hamid, Razali Ismail

Proceedings of the 15th International Conference on Computer Modelling and Simulation, 2013

2010

Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET.

Munawar Agus Riyadi, Ismail Saad, Razali Ismail

Microelectron. J., 2010

Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor.

Desmond Chang Yih Chek, Michael L. P. Tan, Mohammad Taghi Ahmadi, Razali Ismail, Vijay K. Arora

Microelectron. J., 2010

2009

Scattering-limited and ballistic transport in a nano-CMOS circuit.

Ismail Saad, Michael L. P. Tan, Aaron C. E. Lee, Razali Ismail, Vijay K. Arora

Microelectron. J., 2009

Ballistic mobility and saturation velocity in low-dimensional nanostructures.

Ismail Saad, Michael L. P. Tan, Ing Hui Hii, Razali Ismail, Vijay K. Arora

Microelectron. J., 2009

Current-voltage characteristics of a silicon nanowire transistor.

Mohammad Taghi Ahmadi, Hui Houg Lau, Razali Ismail, Vijay K. Arora

Microelectron. J., 2009

Extraction of SPICE Model for Double Gate Vertical MOSFET.

Jatmiko E. Suseno, Muhammad Taghi Ahmad, Munawar Agus Riyadi, Razali Ismail

Proceedings of the Third Asia International Conference on Modelling & Simulation, 2009

Physics-Based Modelling of Ballistic Transport in Nanoscale Transistor.

Ismail Saad, Razak M. A. Lee, Razali Ismail, Vijay K. Arora

Proceedings of the Third Asia International Conference on Modelling & Simulation, 2009

Physics-Based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET.

Munawar Agus Riyadi, Mohammad Taghi Ahmadi, Jatmiko E. Suseno, Kang Eng Siew, Ismail Saad, Razali Ismail, Vijay K. Arora

Proceedings of the Third Asia International Conference on Modelling & Simulation, 2009

2008

Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method.

Ismail Saad, Razali Ismail

Microelectron. J., 2008

The Ultimate Drift Velocity in Two Dimensional Quantum Limit.

Mohammad Taghi Ahmadi, Ismail Saad, Razali Ismail, Vijay K. Arora

Proceedings of the Second Asia International Conference on Modelling and Simulation, 2008

1990

Adaptive meshing schemes for simulating dopant diffusion.

Razali Ismail, Gehan A. J. Amaratunga

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1990