Ramin Ghodsi

According to our database, Ramin Ghodsi authored at least 7 papers between 1994 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2024

13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput.

Koichi Kawai, Yuichi Einaga, Yoko Oikawa, Yankang He, Biagio Iorio, Shigekazu Yamada, Yoshihiko Kamata, Tomoko Iwasaki, Andrea D'Alessandro, Erwin Yu, Arvind Muralidharan, Qinge Li, Henry Nguyen, Kim-Fung Chan, Michele Piccardi, Takaaki Ichikawa, Jeff Yu, Guan Wang, Kwangwon Kim, Chulbum Kim, Paolo Mangalindan, Hojung Yun, Luca Nubile, Kapil Verma, Sushanth Bhushan, Dheeraj Srinivasan, Hidehiko Kuge, Rajesh Subramanian, Jiro Kishimoto, Toru Kamijo, Padma Musunuri, Chang Siau, Ramin Ghodsi

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2022

A 1-Tb Density 4b/Cell 3D-NAND Flash on 176-Tier Technology with 4-Independent Planes for Read using CMOS-Under-the-Array.

Ted Pekny, Luyen Vu, Jeff Tsai, Dheeraj Srinivasan, Erwin Yu, Jonathan Pabustan, Joe Xu, Srinivas Deshmukh, Kim-Fung Chan, Michael Piccardi, Kevin Xu, Guan Wang, Kaveh Shakeri, Vipul Patel, Tomoko Iwasaki, Tongji Wang, Padma Musunuri, Carl Gu, Ali Mohammadzadeh, Ali Ghalam, Violante Moschiano, Tommaso Vali, Jae-Kwan Park, June Lee, Ramin Ghodsi

Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2016

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory.

Tomoharu Tanaka, Mark Helm, Tommaso Vali, Ramin Ghodsi, Koichi Kawai, Jae-Kwan Park, Shigekazu Yamada, Feng Pan, Yuichi Einaga, Ali Ghalam, Toru Tanzawa, Jason Guo, Takaaki Ichikawa, Erwin Yu, Satoru Tamada, Tetsuji Manabe, Jiro Kishimoto, Yoko Oikawa, Yasuhiro Takashima, Hidehiko Kuge, Midori Morooka, Ali Mohammadzadeh, Jong Kang, Jeff Tsai, Emanuele Sirizotti, Eric Lee, Luyen Vu, Yuxing Liu, Hoon Choi, Kwonsu Cheon, Daesik Song, Daniel Shin, Jung Hee Yun, Michele Piccardi, Kim-Fung Chan, Yogesh Luthra, Dheeraj Srinivasan, Srinivasarao Deshmukh, Kalyan Kavalipurapu, Dan Nguyen, Girolamo Gallo, Sumant Ramprasad, Michelle Luo, Qiang Tang, Michele Incarnati, Agostino Macerola, Luigi Pilolli, Luca De Santis, Massimo Rossini, Violante Moschiano, Giovanni Santin, Bernardino Tronca, Hyunseok Lee, Vipul Patel, Ted Pekny, Aaron Yip, Naveen Prabhu, Purval Sule, Trupti Bemalkhedkar, Kiranmayee Upadhyayula, Camila Jaramillo

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2014

19.1 A 128Gb MLC NAND-Flash device using 16nm planar cell.

Mark Helm, Jae-Kwan Park, Ali Ghalam, Jason Guo, Chang-Wan Ha, Cairong Hu, Heonwook Kim, Kalyan Kavalipurapu, Eric Lee, Ali Mohammadzadeh, Dan Nguyen, Vipul Patel, Ted Pekny, Bill Saiki, Daesik Song, Jeff Tsai, Vimon Viajedor, Luyen Vu, Tinwai Wong, Jung Hee Yun, Ramin Ghodsi, Andrea D'Alessandro, Domenico Di Cicco, Violante Moschiano

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2013

A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology.

Giovanni Naso, L. Botticchio, M. Castelli, C. Cerafogli, M. Cichocki, P. Conenna, Andrea D'Alessandro, Luca De Santis, Domenico Di Cicco, W. Di Francesco, M. L. Gallese, Girolamo Gallo, Michele Incarnati, C. Lattaro, Agostino Macerola, G. G. Marotta, Violante Moschiano, D. Orlandi, F. Paolini, S. Perugini, Luigi Pilolli, P. Pistilli, G. Rizzo, F. Rori, Massimo Rossini, Giovanni Santin, Emanuele Sirizotti, A. Smaniotto, U. Siciliani, Marco Tiburzi, R. Meyer, A. Goda, B. Filipiak, Tommaso Vali, Mark Helm, Ramin Ghodsi

Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

2010

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s.

G. G. Marotta, Agostino Macerola, Andrea D'Alessandro, A. Torsi, C. Cerafogli, C. Lattaro, C. Musilli, D. Rivers, Emanuele Sirizotti, F. Paolini, G. Imondi, G. Naso, Giovanni Santin, L. Botticchio, Luca De Santis, Luigi Pilolli, M. L. Gallese, Michele Incarnati, Marco Tiburzi, P. Conenna, S. Perugini, Violante Moschiano, W. Di Francesco, Matt Goldman, Chris Haid, Domenico Di Cicco, D. Orlandi, F. Rori, Massimo Rossini, Tommaso Vali, Ramin Ghodsi, Frank Roohparvar

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

1994

Evaluation and modelling of hot-carrier induced degradation in MOSFETs by gate-to-drain capacitance measurement / by Ramin Ghodsi

Ramin Ghodsi

PhD thesis, 1994