Rami Khazaka

According to our database, Rami Khazaka authored at least 3 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

First Demonstration of Superconducting Nb Contact on Heavily-Doped Group IV Semiconductor.

Gerui Zheng, Enze Zhang, Rami Khazaka, Kaizhen Han, Haiwen Xu, Yuxuan Wang, Hyunsoo Yang, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10^-10 Ω-cm² ρc from Cryogenic (5 K) to Room Temperature.

Gerui Zheng, Yuxuan Wang, Haiwen Xu, Rami Khazaka, Lutz Muehlenbein, Sheng Luo, Xuanqi Chen, Rui Shao, Zijie Zheng, Gengchiau Liang, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10^-10 Ω-cm² P-Type Contact Resistivity: Record 2.5×10²¹ cm^-3 Active Doping and Demonstration on Highly-Scaled 3D Structures.

Haiwen Xu, Rami Khazaka, Jishen Zhang, Zijie Zheng, Yue Chen, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022