Rajat Sinha

According to our database, Rajat Sinha authored at least 2 papers between 2018 and 2020.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2020

Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions.

Rajat Sinha, Prasenjit Bhattacharya, Sanjiv Sambandan, Mayank Shrivastava

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

On the ESD behavior of a-Si: H based thin film transistors: Physical insights, design and technological implications.

Rajat Sinha, Prasenjit Bhattacharya, Sanjiv Sambandan, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2018