Rajarshi Roy Chaudhuri

According to our database, Rajarshi Roy Chaudhuri authored at least 12 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2024

Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs.

Rupali Verma, Utpreksh Patbhaje, Asif Altaf Shah, Jeevesh Kumar, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs.

Asif A. Shah, Rupali Verma, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Jeevcsh Kumar, Anand Kumar Rai, Sumana Chattaraj, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2024

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.

Mehak Ashraf Mir, A. Thakare, Mohammad Ateeb Munshi, V. Avinash, Saniya S. Wani, Zubear Khan, Rajarshi Roy Chaudhuri, Simran R. Karthik, Rasik Rashid Malik, Vipin Joshi, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs.

Rajarshi Roy Chaudhuri, Vipin Joshi, Saniya S. Wani, Simran R. Karthik, Rasik Rashid Malik, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes.

Harsh Raj, Vipin Joshi, Rajarshi Roy Chaudhuri, Rasik Rashid Malik, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs.

Mehak Ashraf Mir, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Rasik Rashid Malik, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs.

Rasik Rashid Malik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mehak Ashraf Mir, Zubear Khan, Avinas N. Shaji, Madhura Bhattacharya, Anup T. Vitthal, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer.

Vipin Joshi, Sayak Dutta Gupta, Rajarshi Roy Chaudhuri, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences.

Rajarshi Roy Chaudhuri, Vipin Joshi, Amratansh Gupta, Tanmay Joshi, Rasik Rashid Malik, Mehak Ashraf Mir, Sayak Dutta Gupta, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020

On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs.

Sayak Dutta Gupta, Vipin Joshi, Rajarshi Roy Chaudhuri, Anant kr Singh, Sirsha Guha, Mayank Shrivastava

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Noise Analysis-Resonant Frequency-Based Combined Approach for Concomitant Detection of Unknown Vapor Type and Concentration.

Debanjan Acharyya, Rajarshi Roy Chaudhuri, Partha Bhattacharyya

IEEE Trans. Instrum. Meas., 2019

2018

Hierarchical MnO2 Nanoflowers Based Efficient Room Temperature Alcohol Sensor.

Debanjan Acharyya, Sanghamitra Ghosal, Rajarshi Roy Chaudhuri, Partha Bhattacharyya

Proceedings of the 2018 IEEE SENSORS, New Delhi, India, October 28-31, 2018, 2018