Rajarshi Roy Chaudhuri

Orcid: 0000-0001-7780-4769

According to our database1, Rajarshi Roy Chaudhuri authored at least 12 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

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Bibliography

2024
Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020
On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Noise Analysis-Resonant Frequency-Based Combined Approach for Concomitant Detection of Unknown Vapor Type and Concentration.
IEEE Trans. Instrum. Meas., 2019

2018
Hierarchical MnO2 Nanoflowers Based Efficient Room Temperature Alcohol Sensor.
Proceedings of the 2018 IEEE SENSORS, New Delhi, India, October 28-31, 2018, 2018


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