Raik Hoffmann
According to our database1,
Raik Hoffmann
authored at least 16 papers
between 2019 and 2024.
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Collaborative distances:
Timeline
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Bibliography
2024
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility.
Adv. Intell. Syst., April, 2024
Proceedings of the 22nd Non-Volatile Memory Technology Symposium, 2024
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions.
Proceedings of the IEEE International Memory Workshop, 2024
2023
Proceedings of the IEEE International Memory Workshop, 2023
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications.
Proceedings of the IEEE International Memory Workshop, 2023
2022
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination.
Proceedings of the IEEE International Memory Workshop, 2022
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology.
Proceedings of the IEEE International Memory Workshop, 2022
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.
Proceedings of the IEEE International Memory Workshop, 2022
Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications.
Proceedings of the International Conference on IC Design and Technology, 2022
2020
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019